|
Home Page | Products | Contact Us | News & Events | Request Info. |
||||
|
|
Spectroscopic Analyses of Semiconductors |
|
||
|
|
||||
|
|
Combined Spectroscopic Analyses of semiconductor Material Structures at the Microscopic LevelAn introduction to: InGaAs, InP, GaN, SiGe, GaAs, GaSb, InSb, SiC characterisation. Raman and photoluminescence spectroscopy are powerful tools for probing the structure of many semiconductor materials. Recent advances in detector technology and spectrometer design have simplified and greatly improved the acquisition capabilities for these techniques. Both Raman and PL spectroscopy are non-destructive, non-invasive techniques, and the combination of the two in one instrument dramatically increases throughput in quality control and research applications alike. They are used to study materials such as Si, InGaAs, InP, GaN, SiGe, GaAs, GaSb,InSb, and SiC , used in detectors and diode emitters, and provides information directly related to the electronic and optical properties of the final product in question
In an industrial facility, the mulit-channel acquisition, automated focusing and mapping provided by the LabRam HR enables fast quality surveys of wafer production to be coupled with the higher end applications of material development and production control.
|
|
Back to top | Home Page | Products | Contact Us | News & Events | Request Info. |
|
|
www.jyhoriba.co.uk |
|
|
EMISSIONFLUORESCENCEFORENSICSGRATINGS & OEM INSTRUMENTSOPTICAL SPECTROSCOPYRAMANTHIN FILM |
|
|
Copyright © 2002 Jobin Yvon All rights reserved |
|