Jobin Yvon Single Channel Detectors

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Jobin Yvon offer two types of single channel detectors for use with scanning spectrometers - Photomultiplier Tubes (PMT) and Solid State Detectors. For multichannel applications with spectrographs, a range of CCD Detectors is available.

The Photomultiplier Tube (PMT) Detector

PMT detectors typically offer much higher sensitivity than solid state detectors and operate effectively in the UV/VIS and NIR. However, typically their spectral coverage is limited to about 950nm. PMT detectors also require high voltage power supplies.

The PMT detectors offered by Jobin Yvon are high quality PMTs in ambient or water cooled housings and head-on or side-on configurations.

Model

PMT Type, Cooling & Housing

Spectral Range

Notes

1911(F or G)

R928 multi-alkali PMT
Ambient cooled
Side window housing

190-860nm

Requires HV source between 200-1200V

1912(F or G)

S1 R406 PMT
Water / TE cooled
Side window housing

400-1100nm

Requires HV source and can go to 1500V. Should use current input, although photon counting can be approximated. Also includes 1630C field lens adapter

1913(F or G)

R943-02 GaAs PMT
Water / TE cooled
End-on window housing

200-930nm

Photon counting recommended. Requires 1500V for HV supply, can go to 1800V. Also includes 1630C field lens adapter.

1914(F or G)

R928 multi-alkali PMT
Water / TE cooled
Side window housing

190-860nm

Requires HV source and can go to 1500V. Use current input or photon counting. Also includes 1630C field lens adapter.

Solid State Detectors

Solid state detectors are opto-electronic devices used to convert incident photons to electronic signals. Available with wavelength ranges from below 200nm to beyond 20µm, solid state detectors offer sensitivity, dependability, cost and efficiency.

Jobin Yvon has a large number of solid state detectors that cover any application. They are available as ambient, thermoelectric, or liquid nitrogen cooled depending on your sensitivity needs.

Solid state detectors can be divided into three classes: photoemissive, photoconductive and dual colour.

Photoemissive detectors are fast, sensitive detectors which generally do not require lock-in amplifiers and choppers except for low-light applications where a chopper and lock-in are recommended. Their upper spectral range is limited to about 5µm.

Photoconductive detectors are slower and not as sensitive but are available up to 12µm or beyond. A chopper and lock-in are required with photoconductive detectors.

Dual Colour detectors are sandwich detectors with usually a silicon detector in front and a second detector behind. The silicon operates up to 1.1µm above which it becomes transparent and the second detector cuts in. Detector efficiency of the silicon drops by about 40%, the second detector efficiency remains the same. Dual colour detectors incorporating PbS and PbSe require a chopper and lock-in amplifier which are also recommended for rest.

To maximise the sensitivity of the solid state detectors, we offer an Infrared Detector Housing for use with all the DSS detectors. The housing includes an elliptical mirror which concentrates the signal at a 6:1 ratio on a 90 degree beam path. By using mirror optics, the energy is at focus on the detector at all wavelengths.

Type

Cooling

Spectral Range

NEP

Notes

Photoemissive Detectors

Silicon (Si)

Uncooled

0.2 - 1.1µm

-

Unamplified. Large area 10x10mm. NEP determined by analogue input

Silicon (Si)

Uncooled

0.3 - 1.1µm

2 x 10^-14

Preamplified. Requires +/-15V

Germanium (Ge)

Uncooled

0.8 - 1.8µm

7 x 10^-13

Preamplified. Requires +/-15V

Germanium (Ge)

TE Cooled

0.8 - 1.75µm

5 x 10^-14

Preamplified. Requires +/-15V

Indium Gallium Arsenide
(InGaAs)

Uncooled

0.8 - 1.7µm

6 x 10^-14

Preamplified. Requires +/-15V

Indium Gallium Arsenide
(InGaAs)

TE Cooled

0.8 - 1.65µm

1 x 10^-14

Preamplified. Requires +/-15V

Indium Gallium Arsenide
(InGaAs)

LN Cooled

0.8 - 1.6µm

1 x 10^-15

Preamplified. Requires +/-15V

Indium Arsenide
(InAs)

Uncooled

1 - 3.6µm

2 x 10^-10

Preamplified. Requires +/-15V

Indium Arsenide
(InAs)

TE Cooled

1 - 3.55µm

1 x 10^-11

Preamplified. Requires +/-15V

Indium Antimonide
(InSb)

LN Cooled

2 - 5.5µm

1 x 10^-12

Preamplified. Requires +/-15V

Photoconductive Detectors

Lead Sulphide (PbS)

Uncooled

1 - 3µm

2 x 10^-12

Preamplified. Requires +/-15V
Chop speed 100-500Hz

Lead Sulphide (PbS)

TE Cooled

1 - 3µm

1 x 10^-12

Preamplified. Requires +/-15V
Chop speed 100-500Hz

Lead Selenide
(PbSe)

Uncooled

1 - 5µm

5 x 10^-11

Preamplified. Requires +/-15V
Chop speed 1KHz

Lead Selenide
(PbSe)

TE Cooled

1 - 5µm

2 x 10^-11

Preamplified. Requires +/-15V
Chop speed 1KHz

Mercury Cadmium
Telluride (HgCdTe)

TE Cooled

1 - 12µm*

5 x 10^-11

Preamplified. Requires +/-15V
Chop speed 1KHz.

*Wavelength response can be modified with loss in range.

Mercury Cadmium
Telluride (HgCdTe)

LN Cooled

1 - 12µm*

5 x 10^-12

Preamplified. Requires +/-15V
Chop speed 1KHz.

*Wavelength response can be modified with loss in range.

Dual Colour Detectors

Si/InGaAs

Uncooled

0.3 - 1.7µm

-

Preamplified. Requires +/-15V

Si/InGaAs

TE Cooled

0.3 - 1.65µm

-

Preamplified. Requires +/-15V

Si/Ge

TE Cooled

0.3 - 1.75µm

-

Preamplified. Requires +/-15V

Si/PbS

TE Cooled

0.3 - 3µm

-

Preamplified. Requires +/-15V

Si/PbSe

TE Cooled

0.3 - 5µm

-

Preamplified. Requires +/-15V

Si/InAs

Uncooled

0.3 - 3.6µm

-

Preamplified. Requires +/-15V

Si/InAs

TE Cooled

0.3 - 3.55µm

-

Preamplified. Requires +/-15V