Interferometric Endpoint Detector and Thin Film Monitor

Interferometry
Interferometry is a
powerful technique that can be used for endpoint detection of planar
layer and trench etching, or deposition. The technique involves
illuminating the surface of a sample (typically a wafer) and
measuring the reflected intensity.
The system may be used as
a simple reflectometer, in which case interfaces between materials
with different refractive indices can be detected by the resultant
step change in the reflectivity signal.
More often however,
interferometry is used. For suitable samples and hardware
configurations, as the sample is etched or deposited the reflectivity
signal oscillates in a sinusoidal manner due to constructive and
destructive interference. Once a period of interference has been
observed the etch/deposition rate can be calculated. The
etch/deposition can then be stopped at a pre-set depth. Additionally
interfaces can also be detected by the changes or even absence of interferometry.
Jobin Yvon has
considerable experience in appropriate hardware selection and process
parameter optimisation and our application scientists will work with
you to obtain a reliable process solution.

DIGILEM Configurations.
DIGILEMs
are available in a variety of configurations with different optical
set-ups to enable the optimum performance for different processes.
We offer three basic configurations:
DIGILEM
Camera;
Enables the measurement to
be made with a microspot. Ideal for complex patterned wafers.
Available with laser diode sources with various wavelengths. 670 nm
is ideal for most silicon processes and 905 nm is especially suited
for III-V processes.
DIGILEM
Twin Spot;
This is a development of
the camera system and allows two separate spots to be placed on the
wafer, one on the open area the other on the resist. This provides
accurate depth control of trench etches in excess of 500 µm and
is ideal for controlling many MEMs processes.
DIGILEM
Tilt;
Permits interferometry
over a large area (typically 30 mm diameter). This system is
especially flexible and can be configured to use a variety of
wavelengths from the UV, visible to the IR to match the optical and
geometric properties of the structure. This type of solution is
particularly suitable for regular structures or planar wafers.
Applications
Typical applications of
the DIGILEM systems include:
In-Situ Real time control of:
Real time monitoring of:
The DIGILEM is
particularly suitable for the following application areas
Microelectronic:
Sub-micron trench etching
of silicon, poly silicon, resist... for DRAM, microprocessors, logic
and flat panel displays
Optoelectronics:
GaAs, AlGaAs, InP ... for
telecommunication products, CCD sensors. The DIGILEM-Camera system
with a 905nm laser is ideally suited for this type of process.
Microsystems:
Micro motors, micro pumps,
hard disk heads and other MEMs applications. The DIGILEM-Twin Spot
has been developed specially for this application
DIGILEM
- Camera
The Jobin
Yvon DIGILEM
includes a compact interferometer that integrates a laser source,
signal detector and a CCD
camera with an
associated illuminator in a compact head. This camera is controlled
by an electronics unit that includes a computer with full software
control of the acquisition.
The camera produces a
microspot on the wafer surface 20 60 µm in diameter,
depending on the wafer to camera distance. This spot can be
positioned accurately anywhere on the wafer using a manual or
motorised XY translation stage and a digital image of the wafer
surface provided by the integrated CCD camera. The motorised stage
can work in conjunction with the image of the wafer surface and a
pattern recognition program for real time pattern specific etching.
The camera is available in
two versions with different wavelength laser diodes. The standard 670
nm red laser version is suitable for most applications. However the
905 nm infra red camera has distinct advantages for III-V applications.
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Click on picture for a
diagram of the camera head |
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Click on picture for the
relationship between spot size and window to sample distance |
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