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Thin Film Links Introduction Ellipsometry Applications Basic Principles Ex-Situ UVISEL In-Situ UVISEL Optical Set-up PZ 2000 PQ Ruby Software Process Control DIGISEM DIGILEM DIGITWIN PlasmaScope MULTISEM User Guide  Process Applications EPD at Interfaces EPD at Depths Optical Emission Spectroscopy Thicknesses, refractive indices and absorption constants Depth Targeting for MEMS III-V Process Control Flat Panel Display Film Thickness Thin dielectric and transparent film Real-time process monitoring Ultra-thin gate oxide (UTGO) layer thicknesses Pulsed Plasma Monitoring  Tell Me More Detailed Product Information Form Quick Request Please send me more information on:  Ellipsometry Process Control Country Your e-mail Optical Emission Spectrometer for Endpoint Detection and Plasma Diagnosis Optical Emission Spectroscopy (OES) is an established and universally accepted technique for endpoint detection and plasma diagnosis. The light emitted by a plasma is characteristic of a process. Useful information on plasma chemical composition, reactive species can be obtained from this light analysis and allows process control. The large spectral range, resolution, sensitivity and scanning speed of JY Horiba's OES systems provides the ideal in-situ monitoring solution for todays shrinking geometries and complex VLSI multi-step processes. The DIGISEM includes a specially designed fast scanning monochromator fitted with a specially selected, high sensitivity photomultiplier for high speed acquisition of whole or partial spectra. Various different monochromators are available with a range of resolutions to suit your application, whether it be research and development of complex III-V processes or high volume silicon production. In all cases the systems are designed to maintain a high level of wavelength accuracy, enabling them to be used to endpoint multiple processes using different wavelengths on the same chamber.   Applications Endpoint detection : deposition and etching Process uniformity control Plasma diagnostics Contamination control Process control of III-V materials Metal film etching Low exposed area processes (less than 0.5%) Rotating magnetic field systems can also be analysed Dual wavelength system allows real-time signal ratioing for enhanced endpoint detection. Main specifications General High sensitivity R928S extended red photomultiplier Analogue amplification with gain variable over five orders of magnitude Fast acquisition board (one spectrum in less than 10 seconds) Coupling by optical fibre with standard KF25 vacuum flange. User friendly, application software with comprehensive endpoint algorithms and wavelength calibration   DGSEM200 - Compact 200 mm focal length scanning monochromator Concave holographic grating Spectral range 200 – 800 nm Resolution 1.0 nm, 2.0 or 0.6 nm on request   DGSEM350 - 350 mm focal length scanning monochromator Czerny-Turner design monochromator with flat grating Spectral range 200 – 800 nm Motorised entrance and exit slits Resolution, user selectable 0.14 – 1.4 nm (at 550 nm)

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