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DIGITWIN

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Introduction

Ellipsometry
Applications
Basic Principles
Ex-Situ UVISEL
In-Situ UVISEL
Optical Set-up
PZ 2000
PQ Ruby
Software

Process Control
DIGISEM
DIGILEM
DIGITWIN
PlasmaScope
MULTISEM
User Guide

 Process Applications

EPD at Interfaces

EPD at Depths

Optical Emission Spectroscopy

Thicknesses, refractive indices and absorption constants

Depth Targeting for MEMS

III-V Process Control

Flat Panel Display Film Thickness

Thin dielectric and transparent film

Real-time process monitoring

Ultra-thin gate oxide (UTGO) layer thicknesses

Pulsed Plasma Monitoring

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 Ellipsometry

Process Control

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Combined OES and laser Interferometry

The wide range of problems encountered in process development and production control cannot always be solved by one single technique. Optical Emission Spectroscopy (OES) provides the selectivity for small open areas and complicated plasma chemistries but gives no information about etch rate or relative thickness.

Interferometry, however, provides both etch rate and thickness but is more sensitive to the optical and geometrical properties of the material. Combining OES and interferometry gives the user all the advantages of both the DIGILEM and DIGISEM in a single instrument. This gives the ability to use both techniques, either simultaneously or independently depending on the application. For example the etch rate can be determined using interferometry and the endpoint at a buried interface can be established using optical emission spectroscopy.

 

Applications
  • In-situ real time control of :

    • Endpoint
    • Layer thickness
    • Remaining layer thickness
    • Trench depth
    • Planarisation
    • Etch and deposition rates
    • Selectivity
    • Contamination
  • Multilayer monitoring
  • Process control of III-V and related materials
  • Failure analysis
  • Low exposed area processes (less than 0.5%)

 

Typical Schematic

We can offer the DIGITWIN with any combination of our sensors, such as twin OES systems for dual wavelength ratio monitoring.

 

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