Ellipsometer software, from Jobin Yvon

Thin Film Links

Introduction

Ellipsometry
Applications
Basic Principles
Ex-Situ UVISEL
In-Situ UVISEL
Optical Set-up
PZ 2000
PQ Ruby
Software

Process Control
DIGISEM
DIGILEM
DIGITWIN
PlasmaScope
MULTISEM
User Guide

Laboratory Applications

Automatic thin-film measurement

Thin Film Metrology

Surface Chemistry

Surface Cleanliness

HMDS Process

Reflectance Difference Spectroscopy (RDS)

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The software provides a spectroscopic, variable angle of incidence, single and multi-wavelength kinetic data acquisition, mapping of samples, modeling of a broad variety of structural and optical properties, deduction of physical parameters of the structures, and graphical display of all curves and tables.

The main features of the data acquisition and analysis software are the following:

Uvisel Data acquisition

Spectroscopic - spectral range of 250 - 850 nm, near-IR extension up to 1.7 microns, minimal increment 0.1 nm minimal acquisition per spectral point 1 ms.

Spectroscopic and variable angle of incidence - between 90 and 20 degrees, minimal increment 0.01 degree.

Kinetic - at a fixed wavelength, minimal acquisition time per kinetic point 1 ms.

Multi-Wavelength - at 16 or 48 wavelength simultaneously.

Mapping - mapping of the sample and 3D display.

Reflection

Transmission

Data Analysis

File data handling

Spectrum manipulations and statistics :
digital filtering and smoothing, numerical differentiation, merging subtraction and scalar operations

Modeling software :
the modeling software provides spectral, multiple angle of incidence and kinetic simulation and fitting of multilayer homogeneous or inhomogeneous systems, with surface roughness, backside reflection correction, in any ambient, on a multilayer substrate as well as qualitative sensitivity analysis.

The Software Includes:

library of reference material dielectric functions ( includes more than 200 materials )

spectroscopic and variable of incidence simulation and fitting

kinetic simulation and fitting

The dielectric functions of materials to be used in the calculations can be derived from:

library of reference data

library of experimentally measured data

functions defined by the following dispersion formulas : Drude (metals, silicides, doped semiconductors), Sellmeier (transparent and absorbing materials), Conrady, Schott-Briot, Multiple harmonic oscillators ( crystalline semiconductors, etc.), Forouhi & Bloomer (amorphous and crystalline semiconductors, dielectrics, strained and relaxed semiconductors), or any user specified dispersion formula can be easily ( it should be written in Pascal ) included in the list by the user himself.

Dielectric functions of inhomogeneous mixtures of materials are provided by the following effective medium approximations:

Maxwell-Garnett (MG) ( a composite consisting of inclusions surrounded by a host material )

Bruggeman (EMA) ( a composite of aggregated phases )

MG and EMA employ arbitrary screening or depolarization factors, i.e. shapes of the inclusions or aggregated phases are taken into account

A combination of EMA and MG : EMANG

Sen, Scala and Cohen (SSC) (polycristalline metals, when boundaries optically isolate neighboring grains)

Volume gradients (linear, exponential) of structural (e.g. relative volume fraction of voids) and optical properties are incorporated.

Characterization of different surface morphologies :

hemispherical

cylindrical

pyramidal

2-dimensional islands

Types of structures

Bulk samples: determination of refractive index and extinction coefficient at each wavelength, alloy composition (ternary III-V and II-VI compound semiconductors, SiGe, etc.), relative volume fraction of constituent (poly-Si, etc.).
Single film transparent: determination of thickness and refractive index versus wavelength
Single film absorbing: determination of thickness, refractive index and extinction coefficient versus wavelength in acase when optical constants of the film are described by a proper dispersion formula or if the film is transparent in a particular part of the ellipsometer spectral range; thickness and alloy composition (ternary III-V compound semiconductors, SiGe, etc.), relative volume fraction of constituent
Mulitlayer samples: up to 10 layers

Kinetic simulation and fitting deal with the following deposition or etching models:

homogeneous growth

homogeneous growth with a stable overlayer

homogeneous growth with a stable overlayer and interface modification

evolution of chemical interface

evolution of chemical interface and an overlayer of homogeneous growth

nucleation (hemispherical or cylindrical)

nucleation and coalescence

nucleation and homogeneous growth with roughness

island growth

growth with linear void fraction gradient

etching of semi-infinite substrate

thin film etching

Non-linear multivariate spectroscopic and variable angle of incidence regression analysis (Marquardt-Levenberg fitting procedure) provides :

set of best values of unknown adjustable parameters which result from a minimum of mean-square between experimental and simulated ellipsometric spectra or kinetic curves (chi square)

minimal chi-square for evaluation of "goodness" of fit

95% confidence limit

parameter correlation matrix

Ellipsometer Software

Uvisel Data acquisition

Data Analysis

The Software Includes:

Types of structures