PlasmaScope, portable multichannel optical emission spectrometer for end point detection

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Introduction

Ellipsometry
Applications
Basic Principles
Ex-Situ UVISEL
In-Situ UVISEL
Optical Set-up
PZ 2000
PQ Ruby
Software

Process Control
DIGISEM
DIGILEM
DIGITWIN
PlasmaScope
MULTISEM
User Guide

Process Applications

EPD at Interfaces

EPD at Depths

Optical Emission Spectroscopy

Thicknesses, refractive indices and absorption constants

Depth Targeting for MEMS

III-V Process Control

Flat Panel Display Film Thickness

Thin dielectric and transparent film

Real-time process monitoring

Ultra-thin gate oxide (UTGO) layer thicknesses

Pulsed Plasma Monitoring

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Multichannel Optical Emission Spectrometer with Advanced Endpoint

Optical Emission Spectroscopy

Optical Emission Spectroscopy (OES) is an established and universally accepted technique for endpoint detection and plasma diagnosis. The light emitted by a plasma is characteristic of a process.

Useful information on plasma chemical composition, reactive species can be obtained from this light analysis and allows process control. The large spectral range, resolution, sensitivity and scanning speed of JY Horiba's OES systems provides the ideal in-situ monitoring solution for todays shrinking geometries and complex VLSI multi-step processes.

The PlasmaScope is a portable or fixed instrument with optional multichamber capability that has been designed to meet all of these requirements, and provides a powerful OES system for industrial and research application. The wide spectral range, resolution and sensitivity provide the ideal in-situ monitoring solution for today's shrinking geometries and complex multi-step processes.

Production improvements

Increases system throughput by automation.

Improve product quality by minimising over-etch.

Chamber Control by real-time Gas Analysis:

Real-time in-situ plasma composition monitoring.

Impurity detection.

Plasma diagnosis

Process improvements

Endpoint detection (etching).

Process uniformity control.

Process control of III-V materials.

Metal film etching.

Low exposed area processes .

Troubleshooting of process chambers

Contamination control.

Fault detection during plasma processing.

Features

Portable version to allow engineers to troubleshoot process problems.

Integrated version for end point control and monitoring of single chambers and cluster tools.

Integrated database and reprocessing capability.

Communication with host computer using industry standard protocols.

Applications

Multichannel OES and end point detection on all layers removes the need for timed etches.

Multichannel interferometry allowing accurate etch to depth.

Chamber monitoring for checking chamber condition and contamination with integrated software for species identification.

Low exposed area (< 0.2%) processes.

Plasma diagnostics.

Real time automatic control of processes.

Process uniformity control

Process control of III-V materials

Metal film etching

Rotating magnetic field systems can also be analysed

Main specifications

Hardware Specification

The PlasmaScope has state of the art optics and includes a super aberration-corrected, concave, holographic diffraction grating for superior imaging and spatial resolution.

Optics

Optical System - CP 140 imaging spectrograph

Wavelength Range - 190 - 800 nm

Detectors - 2048 pixel CCD line array detector.

Integration time - 8 ms to 10 s.

Fibre connection - SMA or JY cross converter adaptation.

Computer and Interface

Integrated computer (Pentium), acquisition and remote boards, QWERTY keyboard and TFT display.
Windows 2000TM operating system.
Remote - RF on / stop etch
RS 232 - SECS, TTY	
TCP/IP - 100Mb/s

Portable Instrument

Dimensions - 210 x 400 x 292 mm.
Weight - 10 kg.

SOFTWARE SPECIFICATION

The PlasmaScope includes many functions for data acquisition, display and processing, along with advanced endpoint capabilities.

Signal Acquisition / Processing / Display

Digital filtering and signal treatment of acquired data.

Data may be combined to optimise signal to noise ratio.

Key parameters for the process can be chosen for instant viewing.

Display of multiple spectra - current / historic/database.

Text window describes data in parallel with graphics view.

Mathematical operations on data sets and each data set can be combined with other curves (spreadsheet style).

3D spectral viewer.

Database and Reprocessing Capability

All data and endpoints are stored to allow review and endpoint optimisation.

Runs may be reprocessed so a minimum number of wafers are required for setting up.

Reprocessed runs can be saved for production simulation & analysis.

Database of species for identification of contaminants.

Statistical output and communication of all / selected runs.

Endpoint Control

Remote start and stop.

Multiple endpoint conditions may be activated at different stages in the process.

Advanced endpoint algorithms using multiple wavelengths and combinations of wavelengths.

Equation editor with syntax checker.

Recipe

Allows turnkey process operation with integration of acquisition and endpoint for process control.

Allows basic monitoring to full endpoint with repeatability checks.

Chamber monitoring

Complete spectra or single / multiple species may be monitored.

Multiple chamber control (option).

Screen shots