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Thin Film Links Introduction Ellipsometry Applications Basic Principles Ex-Situ UVISEL In-Situ UVISEL Optical Set-up PZ 2000 PQ Ruby Software Process Control DIGISEM DIGILEM DIGITWIN PlasmaScope MULTISEM User Guide Laboratory Applications Automatic thin-film measurement Thin Film Metrology Surface Chemistry Surface Cleanliness HMDS Process Reflectance Difference Spectroscopy (RDS)  Tell Me More Detailed Product Information Form Quick Request Please send me more information on:  Ellipsometry Process Control Country Your e-mail Principle Reflectance Difference Spectroscopy (or RDS) is similar to ellipsometry, but measurements are performed under normal, instead of oblique incidence. RDS thus measures the difference in reflectance between two axes of a crystal surface. The difference characterises the surface anisotropy of a structure, which can evolve, for example when materials with a small lattice mismatch are grown on top of each other. This difference is usually very small which requires high performance instruments. The non-invasive property of RDS makes it the unique tool for in situ crystal growth monitoring in OMCVD reactors. Applications Real time growth monitoring during CBE, MBE, or MOVPE Structural and chemical surface analysis Surface anisotropy Interface quality control of quantum wells and supperlattices Surface reconstruction and coverage Crystal cleaning Features 5x10-5 Signal-to-noise ratio Spectral range : 1.5 to 5 eV Compact design : compatible with tight reactors environment Does not require UHV Millisecond time resolution Multi-wavelength option

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