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Thin Film Group - Process Control

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 Process Applications

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Thicknesses, refractive indices and absorption constants

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Real-time process monitoring

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Etch and deposition process control and thin film characterisation

By combining the cumulative experience of Jobin Yvon in optics with the expertise and almost twenty years experience of SOFIE Instruments in thin films processing and plasma diagnosis, JOBIN YVON has now achieved leadership in the market for in-situ real-time process monitoring equipment.

Pursuing a tradition of innovation, and working in collaboration with major semiconductor manufacturers, research establishments and plasma processing equipment suppliers, JOBIN YVON has developed a wide range of complementary analytical instruments for in-situ real time process monitoring and plasma diagnosis. These utilise techniques such as Optical Emission Spectroscopy (OES), Interferometry, Ellipsometry and Langmuir Probes.

Our systems respond to the needs of research and fabrication engineers in the semiconductor and optical thin film industries for high performance process monitoring sensors. Our products are constantly evolving, driven by the innovations of our engineers working in collaboration with customers. The new ideas developed at JY Thin Films group on sensors and analytical methods are protected by numerous international patents. The competitive edge of our products is based on the originality of the architecture, smart sensor technology, analytical methodology, and unique signal processing.

We provide the highest level of technical support to our customers. Our global service network includes agents in 80 different countries as well as three application laboratories dedicated to your sample analysis. Today, more than 1500 instruments are running world wide in Fabs, R&D labs and also embedded as OEM modules within etching equipment.

DIGIFAMILY : " IN SITU THIN FILMS PROCESS CONTROL "

Jobin Yvon offers a comprehensive range of sensors for in-situ process control, allowing the synchronisation of complementary diagnostic tools.

Sensor

Applications

Key Technologies

Optical Emission Spectrometer (OES)

  • Endpoint detection at interfaces

  • Uniformity control
  • Plasma Diagnosis
  • Contamination Control
  • Chamber cleaning control
  • Signal processing

  • Endpoint algorithms
  • Synchronisation between 2 monochromators
  • Embedded software allows the same tool to be used from R&D to full scale manufacturing

Laser or tilt Interferometer

  • End point detection at specified etch depths and at buried interfaces

  • Measures etch and deposition rates
  • Endpoint at given remaining layer thickness
  • Selectivity determination
  • Trench endpointing
  • Deep etch (>500 µm) capability
  • Signal processing

  • Endpoint algorithms
  • Alarm management
  • Interferometry and Imaging
  • Camera includes a CCD sensor to view wafer
  • Pattern recognition
  • Twin Spot Camera
  • 905 nm IR Camera

Combined OES and Interferometry

  • Endpoint detection

  • Etch and deposition rate measurement
  • Plasma diagnosis
  • Signal processing

  • Endpoint algorithms
  • Endpoint conditions using two different sensors

Portable Optical Emission Spectrometer (OES)

  • Endpoint detection at interfaces

  • Uniformity control
  • Plasma Diagnosis
  • Contamination Control
  • Chamber cleaning control
  • Signal processing

  • Endpoint algorithms
  • Synchronisation between 2 monochromators
  • Embedded software allows the same tool to be used from R&D to full scale manufacturing

Multichamber platform

  • Endpoint detection

  • Etch and deposition rates
  • Plasma diagnosis
  • Single user interface for cluster tool control
  • Real-time supervision of all sensors, all chambers

  • PC and Network based architecture
  • Total flexibility allowing combination of up to 16 different sensors

SYSTEM KEY FEATURES

The DIGIFAMILY product range is based on a common, embedded PC controller and pre-emptive multitasking software programmed in 32 bit ADA, which can control up to two of the wide range of sensors simultaneously.

Sophisticated and customised end point algorithms

The ever increasing requirements of the semiconductor market; namely increasing yields, decreasing critical dimensions and reduced process times (which means less data to fit the phenomena with the theory) requires continuous improvements in endpoint methods. Recent enhancements to our endpoint procedures have included combing digital signal processing (DSP) with numerical techniques, cross sampling methods, run to run variation analysis and improved detection sensitivity within noisy signals. Multiple endpoint methods can also be combined for enhanced endpoint detection.

The reprocessing software embedded in our process control instrumentation permits process engineers to replay a previous run in an accelerated mode in order to simulate and verify all signal analysis and all parameter settings without processing additional wafers. It is even possible to perform reprocessing outside of the clean room and to utilise the knowledge of our local customer support team by sending files via the Internet.

Alarms & trend management

In addition to end pointing, Jobin Yvon systems are capable of detecting other process events or incorrect process conditions that could lead to a missed endpoint and the resultant scrapping or reworking of production wafers. Our powerful alarm methods can be selected to analyse and detect process abnormalities before wafers are ruined or require costly rework.

User interface

  • Full colour graphical windowed interface.

  • Menu driven display for minimal keying.
  • Alternative engineer and operator modes.
  • Multiple windows for simultaneous multiple chamber control.

Sensor control

  • Fully automatic, with user access to all control functions.

  • Multiple sensor control in real time.

Data acquisition

  • Signal band pass filtering up to 10 kHz

  • Digital filtering : high, low & band pass
  • Coarse Gain (Analog amplification) : x 1, 10, 100, 1000, 10 000, 100 000 or automatic
  • Fine Gain (Numerical amplification) : x 1, 2, 4, 8 or automatic
  • X & Y software zoom function

Real time in-situ End point detection and control

  • User programmable steps and recipes for optimum endpoint control.

  • High sensitivity endpoint algorithms for OES, Reflectometry and Interferometry.
  • Endpoint triggered by combination of time, signal intensity, first and second derivative and for interferometry, etch thickness.
  • Overetch in seconds or percentage of Endpoint time.

Data management

  • Manual or automatic saving of data on hard disk.

  • Reference spectrum and emission line library accessible on-line for OES systems.
  • Separate reprocessing data base allows review and post analysis of runs.
  • Graphical display of stored runs.
  • Interactive reprocessing for optimization of acquisition and endpoint parameters.
  • Statistical analysis of endpoint data on a batch level for manufacturing quality control.

Remote control

  • Communication protocols for control of process tool ( single or multi chamber ),

  • RF on/off (start/ endpoint).
  • Support for over 50 different tools available
  • Custom design service for new tools
  • Optional SECS II communication for process information (Batch, wafer id, step, process)

Alarm management

A range of alarms is available to detect chamber related problems and to notify the user or automatically stop the etcher. Prevents scrapping entire wafer lots. These include:

  • RF power shut off detection, Light source off, equipment stop order before Endpoint

  • RF on presence, plasma on presence
  • Dirty window detection
  • Flat interferometric signal detection
  • Signal drift detection
  • Etch rate deviation, etch rate and thickness check,
  • Non uniformity

Signal treatment

As endpoint detection requirements become more demanding due to lower exposed areas, smaller features and tighter specifications, additional signal treatment algorithms have been added to the software. This development is continuous and has included:

  • New Etch Rate calculation method

  • Interferometry selectivity compensator
  • Parameters ( Thickness, etch rate etc.) exchange from database
  • EPD on uniformity
  • Scale
  • Thickness and etch rate calibration factor

 

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